tsa874 pnp silicon planar high voltage transistor 1 / 4 version: e 08 sot - 223 product summary bv cbo - 500 v bv ceo - 500 v i c - 150m a v ce(sat) - 0.5 v @ i c / i b = - 50ma / - 1 0ma features low saturation voltages excellent gain characteristics specified up to - 50ma structure epitaxial planar type pnp silicon transistor ordering information part no. package pac king tsa874cw rp sot - 223 2.5kpcs / 13 reel absolute maximum rating ( ta = 25 o c unless otherwise noted ) parameter symbol limit unit collector - base voltage v cbo - 500 v collector - emitter voltage v ceo - 50 0 v emitter - base voltage v ebo - 5 v dc - 150 collector current pulse i c - 500 m a total power dissipation p tot 1 w operating junction temperature t j +150 o c operating junction and storage temperature range t stg - 55 to +150 o c electrical spec ifications ( ta = 25 o c unless otherwise noted ) parameter conditions symbol min typ max u nit collector - base breakdown voltage i c = - 10 0ua, i e = 0 bv cbo - 500 -- -- v collector - emitter breakdown voltage i c = - 1 0 ma, i b = 0 bv ceo - 500 -- -- v emitter - base bre akdown voltage i e = - 10 0ua, i c = 0 bv ebo - 5 -- -- v collector cutoff current v cb = 12 0v, i e = 0 i cbo -- -- - 100 n a emitter cutoff current v eb = 6 v, i c = 0 i ebo -- -- - 10 0 n a i c = - 20m a, i b = - 2 ma v ce(sat) 1 -- -- - 0. 2 coll e ctor - emitter saturation voltage i c = - 50m a , i b = - 1 0 ma v ce(sat) 2 -- - 0.5 v base - emitter saturation voltage i c = - 50m a, i b = - 1 0ma v be(sat) -- -- - 0.9 v base - emitter on voltage v ce = - 10 v, i c = - 50m a v be(on ) -- -- - 0.9 v v ce = - 10 v, i c = - 1m a h fe 1 1 5 0 -- 300 v ce = - 10 v, i c = - 50m a h fe 2 80 -- 300 dc current transfer ratio v ce = - 10 v, i c = - 100m a h fe 3 -- 15 -- transition frequency v ce = 10 v, i c = - 100m a f t -- 50 -- mhz output capacitance v cb = 2 0v , f=1mhz cob -- -- 8 pf turn on time ton -- 110 -- ns turn off time v ce = - 100 v, i c = - 50m a i b1 = - 5ma, i b2 = - 10ma toff -- 1500 -- ns pin definition : 1. base 2. collector 3. emitter
tsa874 pnp silicon planar high voltage transistor 2 / 4 version: e 08 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) figure 1. static characteri sti c s figure 2. dc current gain figure 3. v ce(sat ) v.s. v be(sat figure 4. power derating figure 5 . safety operation area
tsa874 pnp silicon planar high voltage transistor 3 / 4 version: e 08 sot - 223 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code sot - 223 dim ension millimeters inches dim min max min max a 6.350 6.850 0.250 0.270 b 2.900 3.100 0 .114 0.122 c 3.450 3.750 0.136 0.148 d 0.595 0.635 0.023 0.025 e 4.550 4.650 0.179 0.183 f 2.250 2.350 0.088 0.093 g 0.835 1.035 0.032 0.041 h 6.700 7.300 0.263 0.287 i 0.250 0.355 0.010 0.014 j 10 ? 16 ? 10 ? 16 ? k 1.550 1.800 0.061 0.071
tsa874 pnp silicon planar high voltage transistor 4 / 4 version: e 08 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tsc? terms and conditions of sale for such products, tsc assumes no liability whatsoever, and dis claims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property ri ght. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damag es resulting from such improper use or sale.
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